C-MOSI based IR-emitter in SMD-package, Si ARC-window, filling gas air

The cost-efficient infrared emitter JSIR340-4 is optimized for NDIR gas analysis and other infrared measurement applications such as DIR spectroscopy, ATR spectroscopy or PAS spectroscopy. The membrane of the CMOS based IR emitters reaches membrane temperatures of up to 800 °C. It enables long-term stable radiation output for industrial applications to control and monitor process gases at ambient temperatures between -20 and 85 °C.
The silicon filter optimizes the radiation output in the wavelength range from UV to 14 µm.
As an SMD package, the JSIR340 is particularly suitable for automated pick-and-place assembly and high volume production.

The MEMS chip used in our IR emitters consists of a multilayer hot plate diaphragm containing a high temperature stable metal C-MOSI layer. The emitter chip has an active area of 2.2 x 2.2 mm2 and is based on a silicon substrate with a back-etched membrane. All thin film processes are performed using standard MEMS processes and CMOS compatible materials. The active C-MOSI resistive layer is protected against aging and environment.

Our sales team will be happy to advise you on customization and scale prices for high volumes. For more technical information please refer to the datasheet.