C-MOSI based IR-emitter, TO39 with reflector, open

The cost-effective infrared emitter JSIR340-4 is optimized for NDIR gas analysis and other infrared measurement applications such as DIR spectroscopy, ATR spectroscopy or PAS spectroscopy. The membrane of the CMOS-based IR emitter reaches membrane temperatures of up to 770 °C. It enables long-term stable radiation performance for industrial applications to control and monitor process gases, associated gases at ambient temperatures between -20 and 185 °C.

The MEMS chip used in our IR emitters consists of a multilayer hotplate membrane containing a high temperature stable metal C-MOSI layer. The emitter chip has an active area of 2.2 x 2.2 mm² and is based on a silicon substrate with a back-etched membrane. All thin-film processes are carried out using standard MEMS processes and CMOS-compatible materials. The active C-MOSI resistive layer is protected against ageing and the environment.

The JSIR 340-4 emitter is ideal for use together with our IR detectors. Our sales team will be happy to advise you on customer-specific adaptations and graduated prices for large quantities. Further technical information can be found in the data sheet.